Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) launched its new CoolSiC™ MOSFET 750 V G2 technology, designed to deliver improved system efficiency and increased power density in automotive and industrial power conversion applications. The CoolSiC MOSFETs 750 V G2 technology offers a granular portfolio with typical R DS(on) values up to 60 mΩ at 25°C, making it suitable for a wide range of applications, including on-board chargers (OBCs), DC-DC converters, auxiliaries for electric vehicles (xEVs) as well as industrial applications in EV charging, solar inverter, energy storage systems, telecom and SMPS.
The ultra-low R DS(on) values 4 and 7 mΩ enable outstanding performance in static-switching applications, making the MOSFETs a perfect choice for applications such as eFuse, high-voltage battery disconnect switches, solid-state circuit breakers, and solid-state relays. The best-in-class lowest R DS(on) 4 mΩ is featured in Infineon’s innovative top-side cooled Q-DPAK package, which is designed to provide optimal thermal performance and reliability.
The technology also exhibits excellent R DS(on) x Q OSS and best-in-class R DS(on) x Q fr, contributing to reduced switching loss in both hard-switching and soft-switching topologies with superior efficiency in hard-switching user cases. With reduced gate charge, the technology allows for faster switching and reduces gate drive losses, making them more efficient in high-frequency applications.
Additionally, the CoolSiC MOSFETs 750 V G2 offer a combination of high threshold voltage V GS(th),typ of 4.5 V at 25°C and ultra-low Q GD/Q GS ratio, which reinforce robustness against parasitic turn-on (PTO). Furthermore, the technology allows for extended gate driving capabilities, supporting static gate voltages of up to -7 V and transient gate voltages of up to -11 V. This enhanced voltage tolerance provides engineers with greater design margins and best compatibility with other devices in the market.
The CoolSiC 750 V G2 delivers unparalleled switching performance, great ease-of-use and superior reliability with firm adherence to AEC Q101 standards for automotive-grade parts and JEDEC standard for industrial-grade parts. It enables a more efficient, compact and cost-effective designs to fulfill the ever‑growing market needs and underscores its commitment to reliability and longevity in safety-critical automotive applications.
Availability
Infineon’s CoolSiC MOSFET 750 V G2 Q-DPAK 4/7/16/25/60 mΩ samples are available to order. More information is available at www.infineon.com/coolsic-750v
Infineon at the PCIM Europe 2025
PCIM Europe will take place in Nuremberg, Germany, from 6 to 8 May 2025. Infineon will present its products and solutions for decarbonization and digitalization in hall 7, booth #470. Company representatives will also be giving several presentations at the PCIM Expo stages and the accompanying PCIM Conference, followed by discussions with the speakers. If you are interested in interviewing an expert at the show, please email media.relations@infineon.com . Industry analysts interested in a briefing can email MarketResearch.Relations@infineon.com . Information about Infineon’s PCIM 2025 show highlights is available at www.infineon.com/pcim.
 launched its new CoolSiC™ MOSFET 750 V G2 technology, designed to deliver improved system efficiency and increased power density in automotive and industrial power conversion applications. The CoolSiC MOSFETs 750 V G2 technology offers a granular portfolio with typical R DS(on) values up to 60 mΩ at 25°C, making it suitable for a wide range of applications, including on-board chargers (OBCs), DC-DC converters, auxiliaries for electric vehicles (xEVs) as well as industrial applications in EV charging, solar inverter, energy storage systems, telecom and SMPS.){kind=link}