%20today%20announced%20the%20addition%20of%20P-channel%20power%20MOSFETs%C2%A0to%20its%20family%20of%20radiation-tolerant%20power%20MOSFETs%20for%20Low-Earth-Orbit%20(LEO)%20space%20applications.%20The%20new%20devices%20are%20part%20of%20Infineon%E2%80%99s%20expanding%20portfolio%20designed%20for%20next-generation%20%E2%80%9CNewSpace%E2%80%9D%20applications,%20providing%20cost-optimized%20radiation-tolerant%20MOSFETs%20that%20enable%20engineers%20to%20achieve%20faster%20time-to-market%20designs%20using%20smaller%20and%20lighter%20weight%20components%20with%20radiation%20performance%20suitable%20for%20missions%20lasting%20two%20to%20five%20years.%20%C2%A0){kind=link}
Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced the addition of P-channel power MOSFETs to its family of radiation-tolerant power MOSFETs for Low-Earth-Orbit (LEO) space applications. The new devices are part of Infineon’s expanding portfolio designed for next-generation “NewSpace” applications, providing cost-optimized radiation-tolerant MOSFETs that enable engineers to achieve faster time-to-market designs using smaller and lighter weight components with radiation performance suitable for missions lasting two to five years.
“Successful deployment of next-generation LEO satellite constellations and other space-ready systems require radiation-tolerant discretes and ICs with lead times and production volumes that enable rapid deployment and cost optimization,” said Chris Opoczynski, Sr. VP and General Manager, High Reliability (HiRel) Business, Power and Sensor Systems Division, Infineon. “Infineon is leveraging its 50-years of space heritage to bring an industry-first portfolio of efficient and reliable power devices to this dynamic sector of the business.”
The new 60 V P-channel MOSFET complements the already available 60 V and 150 V N-channel devices, all offered in plastic packaging, which is lower in cost than the traditional hermetic packaging used in rad-hardened devices and can be produced in higher volumes using standard manufacturing practices. The radiation-tolerant discretes are qualified for space applications according to the relevant tests of the AEC-Q101 standard. Additional package tests such as outgas and salt atmosphere tests are included as part of the qualification, and they are rated for Single Event Effects (SEE) at 46 MeV∙cm²/mg LET and a Total Ionizing Dose (TID) of 30 to 50 krad (Si). The operating temperature rating is -55 °C to 175 °C (maximum). State-of-the-art technologies, like the patented CoolMOS™ superjunction technology used for the N-channel MOSFETs enables Field Effect Transistors (FETs) from Infineon to offer fast switching capabilities as compared to alternative solutions.
Availability
Infineon offers a diverse product range, catering to various mission requirements. Infineon offers four different N-channel MOSFETs, each optimized for specific tasks, empowering engineers to select between two voltage versions – 60 V and 150 V along with the 60V P-channel, providing the flexibility to suit different power needs.
Infineon is actively developing Gate Drivers, and GaN HEMTs as part of the Radiation Tolerant Product series expansion. This comprehensive range of radiation-tolerant components will further empower space missions with innovative solutions and cost efficiencies. For more information, visit www.infineon.com/cms/en/product/high-reliability/new-space/power/rad-tolerant-mosfets.